BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /

Shranjeno v:

Bibliografske podrobnosti
Glavni avtor:	Jahan, Nusrat .
Korporativna značnica:	Supervised by Yasir Arafat (Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.)
Drugi avtorji:	Priyanka Biswas, Rowshon Ara Mannan
Format:	Knjiga
Jezik:	angleščina
Izdano:	Dhaka : CE DEPT MIST , c 2013.
Teme:	Thesis Paper of EECE in B.Sc Prog. Electrical, Electronic and Communication Engineering.
Oznake:	Označite Brez oznak, prvi označite!

Podobne knjige/članki