Delwedd Flaen

BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /

Wedi'i Gadw mewn:
Prif Awdur: Jahan, Nusrat .
Awdur Corfforaethol: Supervised by Yasir Arafat (Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.)
Awduron Eraill: Priyanka Biswas, Rowshon Ara Mannan
Fformat: Llyfr
Iaith:Saesneg
Cyhoeddwyd: Dhaka : CE DEPT MIST , c 2013.
Pynciau:
Thesis Paper of EECE in B.Sc Prog.
Electrical, Electronic and Communication Engineering.
Tagiau: Ychwanegu Tag
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

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