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BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /

Salvato in:
Autore principale: Jahan, Nusrat .
Ente Autore: Supervised by Yasir Arafat (Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.)
Altri autori: Priyanka Biswas, Rowshon Ara Mannan
Natura: Libro
Lingua:inglese
Pubblicazione: Dhaka : CE DEPT MIST , c 2013.
Soggetti:
Thesis Paper of EECE in B.Sc Prog.
Electrical, Electronic and Communication Engineering.
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