BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /

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書目詳細資料
主要作者:	Jahan, Nusrat .
企業作者:	Supervised by Yasir Arafat (Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.)
其他作者:	Priyanka Biswas, Rowshon Ara Mannan
格式:	圖書
語言:	英语
出版:	Dhaka : CE DEPT MIST , c 2013.
主題:	Thesis Paper of EECE in B.Sc Prog. Electrical, Electronic and Communication Engineering.
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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100		\|a Jahan, Nusrat .
245		\|a BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE / \|c Nusrat Jahan.
260		\|a Dhaka : \|b CE DEPT MIST , \|c c 2013.
300		\|a 87 p. : \|b ill. ; \|c 29 cm.
541		\|e TP-823
650		\|a Thesis Paper of EECE in B.Sc Prog.
650		\|a Electrical, Electronic and Communication Engineering.
700		\|a Priyanka Biswas .
700		\|a Rowshon Ara Mannan .
710		\|a Supervised by Yasir Arafat \|e Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.
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