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BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /

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Glavni autor: Jahan, Nusrat .
Autor kompanije: Supervised by Yasir Arafat (Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.)
Daljnji autori: Priyanka Biswas, Rowshon Ara Mannan
Format: Knjiga
Jezik:engleski
Izdano: Dhaka : CE DEPT MIST , c 2013.
Teme:
Thesis Paper of EECE in B.Sc Prog.
Electrical, Electronic and Communication Engineering.
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