BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /

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Xehetasun bibliografikoak
Egile nagusia:	Jahan, Nusrat .
Erakunde egilea:	Supervised by Yasir Arafat (Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.)
Beste egile batzuk:	Priyanka Biswas, Rowshon Ara Mannan
Formatua:	Liburua
Hizkuntza:	ingelesa
Argitaratua:	Dhaka : CE DEPT MIST , c 2013.
Gaiak:	Thesis Paper of EECE in B.Sc Prog. Electrical, Electronic and Communication Engineering.
Etiketak:	Etiketa erantsi Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!

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