A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /

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Bibliografski detalji
Glavni autor: Mahbub, Lamiya
Autor kompanije: Supervised by Sunjida Sultana (Assistant Professor, Dept of EECE, MIST)
Daljnji autori: Badhon, Mehrab Ibne Masud
Format: Knjiga
Jezik:engleski
Izdano: Dhaka : EECE DEPT. MIST, c2024.
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