A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /

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Dades bibliogràfiques
Autor principal:	Mahbub, Lamiya
Autor corporatiu:	Supervised by Sunjida Sultana (Assistant Professor, Dept of EECE, MIST)
Altres autors:	Badhon, Mehrab Ibne Masud
Format:	Llibre
Idioma:	anglès
Publicat:	Dhaka : EECE DEPT. MIST, c2024.
Matèries:	Electrical, Electronic and Communication Engineering. This Thesis Paper of EECE in BSc Program.
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