A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /

Wedi'i Gadw mewn:

Manylion Llyfryddiaeth
Prif Awdur:	Mahbub, Lamiya
Awdur Corfforaethol:	Supervised by Sunjida Sultana (Assistant Professor, Dept of EECE, MIST)
Awduron Eraill:	Badhon, Mehrab Ibne Masud
Fformat:	Llyfr
Iaith:	Saesneg
Cyhoeddwyd:	Dhaka : EECE DEPT. MIST, c2024.
Pynciau:	Electrical, Electronic and Communication Engineering. This Thesis Paper of EECE in BSc Program.
Tagiau:	Ychwanegu Tag Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!

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