PHYSICS BASED MODELING AND CIRCUIT LEVEL EVALUATION OF SI-ON SIC MOSFET FOR HIGH-SPEED AND LOW POWER VLSI APPLICATIONS /
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| Главный автор: | |
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| Язык: | английский |
| Опубликовано: |
Dhaka :
EECE DEPT. MIST,
c2026.
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Нет меток, Требуется 1-ая метка записи!
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