PHYSICS BASED MODELING AND CIRCUIT LEVEL EVALUATION OF SI-ON SIC MOSFET FOR HIGH-SPEED AND LOW POWER VLSI APPLICATIONS /

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Opis bibliograficzny
1. autor:	Zaman, Faria
Korporacja:	Supervised by Lt Col Md Tawfiq Amin (Instructor Class A, Dept. of EECE, MIST, Dhaka)
Format:	Książka
Język:	angielski
Wydane:	Dhaka : EECE DEPT. MIST, c2026.
Hasła przedmiotowe:	Electrical, Electronic and Communication Engineering. This Thesis Paper of EECE in BSc Program.
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

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LEADER	00000nam a22000007a 4500
001	TP-3185
003	BD-DhMIS
005	20260825201505.0
008	260825t2026 bg a\|\|\|\| b\|\|\| 000 0 eng
040		\|a BD-DhMIS \|c BD-DhMIS
100		\|a Zaman, Faria \|9 1681
245		\|a PHYSICS BASED MODELING AND CIRCUIT LEVEL EVALUATION OF SI-ON SIC MOSFET FOR HIGH-SPEED AND LOW POWER VLSI APPLICATIONS / \|c Faria Zaman, Md Mozahidul Islam
260		\|a Dhaka : \|b EECE DEPT. MIST, \|c c2026.
300		\|a vii, 226p. : \|b ills. ; \|c 29 cm.
504		\|a Includes bibliographical references.
541		\|e TP-3185
650		\|a Electrical, Electronic and Communication Engineering. \|9 1682
650		\|a This Thesis Paper of EECE in BSc Program. \|9 1683
710		\|a Supervised by Lt Col Md Tawfiq Amin \|e Instructor Class A, Dept. of EECE, MIST, Dhaka \|9 1686
942		\|2 ddc \|c TP
999		\|c 12747 \|d 12747