Mahbub, L., & Badhon, M. I. M. (2024). A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS. EECE DEPT. MIST.
Cóipeáladh chuig an ngearrthaisce go rathúil é
Níorbh fhéidir cóipeáil chuig an ngearrthaisce
Lua i Stíl Chicago (17ú heag.)
Mahbub, Lamiya, agus Mehrab Ibne Masud Badhon. A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS. Dhaka: EECE DEPT. MIST, 2024.
Cóipeáladh chuig an ngearrthaisce go rathúil é
Níorbh fhéidir cóipeáil chuig an ngearrthaisce
Lua MLA (9ú heag.)
Mahbub, Lamiya, agus Mehrab Ibne Masud Badhon. A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS. EECE DEPT. MIST, 2024.
Cóipeáladh chuig an ngearrthaisce go rathúil é
Níorbh fhéidir cóipeáil chuig an ngearrthaisce
Rabhadh: Seans nach mbeach na luanna seo go hiomlán cruinn i ngach uile chás.