A COMPACT ANALYTICAL MADEL OF DOUBLE GATE TUNNEL-FETs WITH ALGaSb/ InAs HETEROJUNCTION STRUCTURE /
Saved in:
| 主要作者: | |
|---|---|
| 企业作者: | |
| 格式: | 图书 |
| 语言: | 英语 |
| 出版: |
Dhaka :
EECE DEPT MIST ,
c 2022
|
| 主题: | |
| 标签: |
没有标签, 成为第一个标记此记录!
|
相似书籍: A COMPACT ANALYTICAL MADEL OF DOUBLE GATE TUNNEL-FETs WITH ALGaSb/ InAs HETEROJUNCTION STRUCTURE /
- The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
- Statistical Leakage Current Analysis of Trapezoidal Tri-Gate FinFET
- A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /
- Transportation Tunnels /
- Acing the GATE 2017 : mechanical engineering /
- Gate tutor 2019 : electrical engineering /