A COMPACT ANALYTICAL MADEL OF DOUBLE GATE TUNNEL-FETs WITH ALGaSb/ InAs HETEROJUNCTION STRUCTURE /
Wedi'i Gadw mewn:
| Prif Awdur: | |
|---|---|
| Awdur Corfforaethol: | |
| Fformat: | Llyfr |
| Iaith: | Saesneg |
| Cyhoeddwyd: |
Dhaka :
EECE DEPT MIST ,
c 2022
|
| Pynciau: | |
| Tagiau: |
Dim Tagiau, Byddwch y cyntaf i dagio'r cofnod hwn!
|
Eitemau Tebyg: A COMPACT ANALYTICAL MADEL OF DOUBLE GATE TUNNEL-FETs WITH ALGaSb/ InAs HETEROJUNCTION STRUCTURE /
- The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
- Statistical Leakage Current Analysis of Trapezoidal Tri-Gate FinFET
- A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /
- Transportation Tunnels /
- Gate tutor 2019 : electrical engineering /
- Acing the GATE 2017 : mechanical engineering /