Jahan, N. . .., Priyanka Biswas, & Rowshon Ara Mannan. (2013). BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE. CE DEPT MIST.
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Chicago Style (17th ed.) Citation
Jahan, Nusrat ., Priyanka Biswas, and Rowshon Ara Mannan. BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE. Dhaka: CE DEPT MIST, 2013.
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MLA引文
Jahan, Nusrat ., et al. BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE. CE DEPT MIST, 2013.
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