BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /

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Detalles Bibliográficos
Autor Principal: Jahan, Nusrat .
Autor Corporativo: Supervised by Yasir Arafat (Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.)
Outros autores: Priyanka Biswas, Rowshon Ara Mannan
Formato: Libro
Idioma:inglés
Publicado: Dhaka : CE DEPT MIST , c 2013.
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