BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /

Sábháilte in:
Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Jahan, Nusrat .
Údar corparáideach: Supervised by Yasir Arafat (Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.)
Rannpháirtithe: Priyanka Biswas, Rowshon Ara Mannan
Formáid: LEABHAR
Teanga:Béarla
Foilsithe / Cruthaithe: Dhaka : CE DEPT MIST , c 2013.
Ábhair:
Clibeanna: Cuir clib leis
Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!

Míreanna comhchosúla: BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /