ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
Guardado en:
| Autor principal: | |
|---|---|
| Autor Corporativo: | |
| Otros Autores: | , |
| Formato: | Libro |
| Lenguaje: | inglés |
| Publicado: |
Dhaka :
EECE DEPT. MIST,
c2024.
|
| Materias: | |
| Etiquetas: |
Sin Etiquetas, Sea el primero en etiquetar este registro!
|
Ejemplares similares: ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
- SEISMIC PERFORMANCE INVES"nGA"nON OF BASE ISOLATION SYSTEM FOR TYPICAL RESIDENTIAL BUILDING IN BANGLADESH
- The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
- THE EARLY VOLTAGE AND CURRENT GAIN OF IN GA AS DOUBLE HETERO JUNCTION BIPOLAR TRANSISTOR /
- GA 01 Contemporary Architecture Museum 1 /
- Microwave MESFETs and HEMTs /
- CFD ANALYSIS AND OPTIMIZATION OF WAVY AND N-SHAPED MICROCHANNEL HEAT EXCHANGERS /