ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
Uloženo v:
| Hlavní autor: | |
|---|---|
| Korporativní autor: | |
| Další autoři: | , |
| Médium: | Kniha |
| Jazyk: | angličtina |
| Vydáno: |
Dhaka :
EECE DEPT. MIST,
c2024.
|
| Témata: | |
| Tagy: |
Žádné tagy, Buďte první, kdo vytvoří štítek k tomuto záznamu!
|
Podobné jednotky: ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
- SEISMIC PERFORMANCE INVES"nGA"nON OF BASE ISOLATION SYSTEM FOR TYPICAL RESIDENTIAL BUILDING IN BANGLADESH
- The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
- THE EARLY VOLTAGE AND CURRENT GAIN OF IN GA AS DOUBLE HETERO JUNCTION BIPOLAR TRANSISTOR /
- GA 01 Contemporary Architecture Museum 1 /
- Microwave MESFETs and HEMTs /
- CFD ANALYSIS AND OPTIMIZATION OF WAVY AND N-SHAPED MICROCHANNEL HEAT EXCHANGERS /