ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
محفوظ في:
| المؤلف الرئيسي: | |
|---|---|
| مؤلف مشترك: | |
| مؤلفون آخرون: | , |
| التنسيق: | كتاب |
| اللغة: | الإنجليزية |
| منشور في: |
Dhaka :
EECE DEPT. MIST,
c2024.
|
| الموضوعات: | |
| الوسوم: |
لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
|
مواد مشابهة: ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
- SEISMIC PERFORMANCE INVES"nGA"nON OF BASE ISOLATION SYSTEM FOR TYPICAL RESIDENTIAL BUILDING IN BANGLADESH
- The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
- THE EARLY VOLTAGE AND CURRENT GAIN OF IN GA AS DOUBLE HETERO JUNCTION BIPOLAR TRANSISTOR /
- GA 01 Contemporary Architecture Museum 1 /
- Microwave MESFETs and HEMTs /
- CFD ANALYSIS AND OPTIMIZATION OF WAVY AND N-SHAPED MICROCHANNEL HEAT EXCHANGERS /