The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
All thanks belongs to Almighty Allah who has created us and helped us to do all deeds on earth, also who has united many kind hearts to accomplish any great job for mankind. The author like to express their sincere gratitude to the supervisor, Yeasir Arafat, Assistant Professor of EEE Department, BU...
Salvato in:
| Autori principali: | , |
|---|---|
| Natura: | Tesi |
| Lingua: | inglese |
| Pubblicazione: |
Department of Electrical, Electronics and Communication Engineering, MILITARY INSTITUTE OF SCIENCE AND TECHNOLOGY
2015
|
| Soggetti: | |
| Accesso online: | http://hdl.handle.net/123456789/154 |
| Tags: |
Nessun Tag, puoi essere il primo ad aggiungerne!!
|
Documenti analoghi: The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
- THE EARLY VOLTAGE AND CURRENT GAIN OF IN GA AS DOUBLE HETERO JUNCTION BIPOLAR TRANSISTOR /
- Semiconductor circuit approximations : an introduction to transistors and integrated circuits /
- Characterization and Contact Effects of Organic Thin Film Transistor
- A SCHEME FOR GAIN FLATTEN OF FIBRE RAMAN AMPLIFIER FOR WDM TRANSMISSION SYSTEMS
- Solid state electronic circuits: for engineering technology
- High-Voltage Engineering : Theory and Practice /