The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor

All thanks belongs to Almighty Allah who has created us and helped us to do all deeds on earth, also who has united many kind hearts to accomplish any great job for mankind. The author like to express their sincere gratitude to the supervisor, Yeasir Arafat, Assistant Professor of EEE Department, BU...

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Main Authors:	SANBIR HASAN MAJUMDER, MAJOR MUHAMMAD, CHOWDHURY, JOAIRIA
פורמט:	Thesis
שפה:	אנגלית
יצא לאור:	Department of Electrical, Electronics and Communication Engineering, MILITARY INSTITUTE OF SCIENCE AND TECHNOLOGY 2015
נושאים:	VOLTAGE, CURRENT GAIN, InGaAs, HETEROJUNCTION, BIPOLAR, TRANSISTOR
גישה מקוונת:	http://hdl.handle.net/123456789/154
תגים:	הוספת תג אין תגיות, היה/י הראשונ/ה לתייג את הרשומה!