A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /
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| 语言: | 英语 |
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Dhaka :
EECE DEPT. MIST,
c2024.
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