A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /

Sábháilte in:
Sonraí bibleagrafaíochta
Príomhchruthaitheoir: Mahbub, Lamiya
Údar corparáideach: Supervised by Sunjida Sultana (Assistant Professor, Dept of EECE, MIST)
Rannpháirtithe: Badhon, Mehrab Ibne Masud
Formáid: LEABHAR
Teanga:Béarla
Foilsithe / Cruthaithe: Dhaka : EECE DEPT. MIST, c2024.
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Míreanna comhchosúla: A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /