A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Körperschaft: | |
| Weitere Verfasser: | |
| Format: | Buch |
| Sprache: | Englisch |
| Veröffentlicht: |
Dhaka :
EECE DEPT. MIST,
c2024.
|
| Schlagworte: | |
| Tags: |
Keine Tags, Fügen Sie das erste Tag hinzu!
|
Ähnliche Einträge: A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /
- FABRICATION AND CHARACTERIZATION OF Li0.5Ce (0.5-x) SmxWO4; x=0,0.1,0.5 ELECTROLYTE MATERIAL SOLID OXIDE FUEL CELL /
- STUDY OF Ba1-xNaxCe0.7Zr0.1Y0.15Zn0.05O3-δ (x = 0.1, 0.3 & 0.5) STRUCTURE AS ELECTROLYTE FOR PROTON CONDUCTING SOLID OXIDE FUEL CELL /
- GA 01 Contemporary Architecture Museum 1 /
- FABRICATION AND CHARACTERIZATION OF Baccaros Yous xGdxZn030 (X=0, 0.05, 0.1, 0.15) AS A NOVEL ELECTROLYTE FOR PROTON-CONDUCTING SOLID OXIDE FUEL CELL /
- ENHANCING DOUBLE-CHANNEL AlGaN/GaN HEMT PERFORMANCE: INVESTIGATING THE INFLUENCE OF GATE DIELECTRIC AND THICKNESS /
- A COMPACT ANALYTICAL MADEL OF DOUBLE GATE TUNNEL-FETs WITH ALGaSb/ InAs HETEROJUNCTION STRUCTURE /