Modeling Of Photoelastic Constant Dependent On Arbitrary Crystal Orientation

A mathematical model is proposed to determine the photoelastic constants in arbitrary crystal orientation of Zincblende crystal structure. Tensor rotation technique is applied using Euler’s rotation theorem to develop the model. The model is applicable to evaluate photoelastic constants in terms o...

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সংরক্ষণ করুন:
গ্রন্থ-পঞ্জীর বিবরন
প্রধান লেখক: Jahan Rashid Pinky, Lubna, Naim Rakib Ahmed, Abu
বিন্যাস: প্রবন্ধ
ভাষা:ইংরেজি
প্রকাশিত: R&D Wing, MIST 2015
বিষয়গুলি:
অনলাইন ব্যবহার করুন:http://hdl.handle.net/123456789/209
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author Jahan Rashid Pinky, Lubna
Naim Rakib Ahmed, Abu
author_browse Jahan Rashid Pinky, Lubna
Naim Rakib Ahmed, Abu
author_facet Jahan Rashid Pinky, Lubna
Naim Rakib Ahmed, Abu
author_sort Jahan Rashid Pinky, Lubna
collection DSpace
description A mathematical model is proposed to determine the photoelastic constants in arbitrary crystal orientation of Zincblende crystal structure. Tensor rotation technique is applied using Euler’s rotation theorem to develop the model. The model is applicable to evaluate photoelastic constants in terms of P11-P12 and P44 in any crystal plane by controlling the rotation angle using the model. P11-P12 and P44 are calculated for Silicon crystal and found that the values of these constants are strongly dependent on crystal orientations. The outcome of this research enables us to evaluate quantitative amount of strain in polycrystalline silicon material (solar cell material) using Scanning Infrared Polariscope.
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spelling oai:localhost:123456789-2092015-09-18T03:47:39Z Modeling Of Photoelastic Constant Dependent On Arbitrary Crystal Orientation Jahan Rashid Pinky, Lubna Naim Rakib Ahmed, Abu Photoelastic constant, polycrystalline silicon, tensor rotation, crystal orientation, scanning infrared Polariscope method. A mathematical model is proposed to determine the photoelastic constants in arbitrary crystal orientation of Zincblende crystal structure. Tensor rotation technique is applied using Euler’s rotation theorem to develop the model. The model is applicable to evaluate photoelastic constants in terms of P11-P12 and P44 in any crystal plane by controlling the rotation angle using the model. P11-P12 and P44 are calculated for Silicon crystal and found that the values of these constants are strongly dependent on crystal orientations. The outcome of this research enables us to evaluate quantitative amount of strain in polycrystalline silicon material (solar cell material) using Scanning Infrared Polariscope. R&D Wing 2015-09-10T03:17:22Z 2015-09-10T03:17:22Z 2011-02 Article 2073-6444 http://hdl.handle.net/123456789/209 en Galaxy (Dhaka) : The Annual Technical Journal of MIST;Volume 3, Number 3, February 2011 application/pdf R&D Wing, MIST
spellingShingle Photoelastic constant, polycrystalline silicon, tensor rotation, crystal orientation, scanning infrared Polariscope method.
Jahan Rashid Pinky, Lubna
Naim Rakib Ahmed, Abu
Modeling Of Photoelastic Constant Dependent On Arbitrary Crystal Orientation
title Modeling Of Photoelastic Constant Dependent On Arbitrary Crystal Orientation
title_full Modeling Of Photoelastic Constant Dependent On Arbitrary Crystal Orientation
title_fullStr Modeling Of Photoelastic Constant Dependent On Arbitrary Crystal Orientation
title_full_unstemmed Modeling Of Photoelastic Constant Dependent On Arbitrary Crystal Orientation
title_short Modeling Of Photoelastic Constant Dependent On Arbitrary Crystal Orientation
title_sort modeling of photoelastic constant dependent on arbitrary crystal orientation
topic Photoelastic constant, polycrystalline silicon, tensor rotation, crystal orientation, scanning infrared Polariscope method.
url http://hdl.handle.net/123456789/209
work_keys_str_mv AT jahanrashidpinkylubna modelingofphotoelasticconstantdependentonarbitrarycrystalorientation
AT naimrakibahmedabu modelingofphotoelasticconstantdependentonarbitrarycrystalorientation