Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET
First of all, we would like to thank The Almighty Allah for the accomplishment of our research work. We would like to acknowledge and proclaim out gratitude to our thesis supervisor, Dr. Md. Kawsar Alam, Assistant Professor, Department of EEE, BUET, for his valuable guidance and advice. He inspir...
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| Formatua: | Tesis |
| Hizkuntza: | ingelesa |
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Department of Electrical, Electronic & Communication Engineering, Military Institute of Science and Technology (MIST)
2015
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| Gaiak: | |
| Sarrera elektronikoa: | http://hdl.handle.net/123456789/132 |
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| _version_ | 1868227004040478720 |
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| author | Raisa, Farah Mansur, Anika Bintey Ahmed, Tasmia |
| author_browse | Ahmed, Tasmia Mansur, Anika Bintey Raisa, Farah |
| author_facet | Raisa, Farah Mansur, Anika Bintey Ahmed, Tasmia |
| author_sort | Raisa, Farah |
| collection | DSpace |
| description | First of all, we would like to thank The Almighty Allah for the accomplishment of our research
work. We would like to acknowledge and proclaim out gratitude to our thesis supervisor, Dr.
Md. Kawsar Alam, Assistant Professor, Department of EEE, BUET, for his valuable guidance
and advice. He inspired us greatly to work in the difficult field of high frequency analog domain.
He was always spontaneous to provide a helping hand whenever we were in a spot of bother. His
encouragement, guidance and support from the initial to the final level enabled us to develop an
understanding of the subject. Besides, we would like to thank the faculty members of the
Department of Electrical Electronic and Communication Engineering, Military Institute of
Science and Technology for providing us with all kinds of support. We are indebted to the
authority of Military Institute of Science and Technology for providing us necessary funding and
good environment and facilities to complete this thesis paper.
Lastly we would like to thank every single individual who directly and indirectly helped us to
accomplish our thesis by providing advice, care, attention and all kinds support. |
| format | Thesis |
| id | oai:localhost:123456789-132 |
| institution | My University |
| language | English |
| publishDate | 2015 |
| publishDateRange | 2015 |
| publishDateSort | 2015 |
| publisher | Department of Electrical, Electronic & Communication Engineering, Military Institute of Science and Technology (MIST) |
| publisherStr | Department of Electrical, Electronic & Communication Engineering, Military Institute of Science and Technology (MIST) |
| record_format | dspace |
| spelling | oai:localhost:123456789-1322015-08-04T08:22:23Z Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET Raisa, Farah Mansur, Anika Bintey Ahmed, Tasmia Simulation, Characterization, Silicon-On-Insulator, MOSFET. First of all, we would like to thank The Almighty Allah for the accomplishment of our research work. We would like to acknowledge and proclaim out gratitude to our thesis supervisor, Dr. Md. Kawsar Alam, Assistant Professor, Department of EEE, BUET, for his valuable guidance and advice. He inspired us greatly to work in the difficult field of high frequency analog domain. He was always spontaneous to provide a helping hand whenever we were in a spot of bother. His encouragement, guidance and support from the initial to the final level enabled us to develop an understanding of the subject. Besides, we would like to thank the faculty members of the Department of Electrical Electronic and Communication Engineering, Military Institute of Science and Technology for providing us with all kinds of support. We are indebted to the authority of Military Institute of Science and Technology for providing us necessary funding and good environment and facilities to complete this thesis paper. Lastly we would like to thank every single individual who directly and indirectly helped us to accomplish our thesis by providing advice, care, attention and all kinds support. During micro-electronic evolution, MOS Technology on massive substrate played a critical task. The regular reduction of transistors sizes leads us today’s nanoscale devices. According to the ITRS roadmap, the high performance device should have a much reduced gate length in the coming years. With this reduction, some parasitic physical effects became mostly amplified, leading to the end of MOSFETs technology on massive substrate. Bulk silicon CMOS processes are reaching their limit in device miniaturization and fabrication, new technologies, such as SOI technology gives a good alternative to that miniaturization. SOI technology allows the reduction of short channel effects that appear in nanoscale devices and also allows micro-electronic evolution to continue. In this paper, we present the simulation of SOI MOSFET structure obtained using SILVACO TCAD. We also exhibit some insights on the influence of some device parameters such as oxide length, doping, channel length etc on the drain current of SOI MOSFET. Department of Electrical, Electronic & Communication Engineering Military Institute of Science and Technology (MIST) 2015-06-30T06:04:40Z 2015-06-30T06:04:40Z 2013-12 Thesis http://hdl.handle.net/123456789/132 en Bachelor thesis in Electrical, Electronic and Communication Engineering.; application/pdf Department of Electrical, Electronic & Communication Engineering, Military Institute of Science and Technology (MIST) |
| spellingShingle | Simulation, Characterization, Silicon-On-Insulator, MOSFET. Raisa, Farah Mansur, Anika Bintey Ahmed, Tasmia Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET |
| title | Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET |
| title_full | Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET |
| title_fullStr | Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET |
| title_full_unstemmed | Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET |
| title_short | Simulation and Characterization of Silicon-On- Insulator (SOI) MOSFET |
| title_sort | simulation and characterization of silicon on insulator soi mosfet |
| topic | Simulation, Characterization, Silicon-On-Insulator, MOSFET. |
| url | http://hdl.handle.net/123456789/132 |
| work_keys_str_mv | AT raisafarah simulationandcharacterizationofsilicononinsulatorsoimosfet AT mansuranikabintey simulationandcharacterizationofsilicononinsulatorsoimosfet AT ahmedtasmia simulationandcharacterizationofsilicononinsulatorsoimosfet |