http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE
Assistant profesor, Department of Electrical, Electronic and Communication Engineering, BUET Dhaka.
Electrical, Electronic and Communication Engineering