Παρόμοια τεκμήρια: BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /
- BASE TRANSIT TIME OF A GRADED BASE ALY GAL-YAS HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH GAUSSIAN DOPED BASE /
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- BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /
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Θέμα: Electrical, Electronic and Communication Engineering.
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- DESIGN AND CHARACTERIZATION OF BULK AND SOL FINFETS /
- BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /
- THE EARLY VOLTAGE AND CURRENT GAIN OF IN GA AS DOUBLE HETERO JUNCTION BIPOLAR TRANSISTOR /
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Συγγραφέας: Jahan, Nusrat .
- BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /
- BASE TRANSIT TIME OF A GRADED BASE ALY GAL-YAS HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH GAUSSIAN DOPED BASE /
- DESIGN AND DEVELOPMENT OF A HANDHELD PORTABLE OCULAR IMAGING DEVICE TO DETECT EYE DISEASE /