Схожі ресурси: A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /

Тема: Electrical, Electronic and Communication Engineering.

Тема: This Thesis Paper of EECE in BSc Program.

Автор: Mahbub, Lamiya

Автор: Badhon, Mehrab Ibne Masud