Antzeko izenburuak: A COMPACT ANALYTICAL MADEL OF DOUBLE GATE TUNNEL-FETs WITH ALGaSb/ InAs HETEROJUNCTION STRUCTURE /
- The Early Voltage and Current Gain of InGaAs Double Heterojunction Bipolar Transistor
- Statistical Leakage Current Analysis of Trapezoidal Tri-Gate FinFET
- A COMPREHENSIVE INVESTIGATION OF GaSb/GaAs0.5Sb0.5/GaAs BASED DG-HJ-SP-HD VERTICAL TUNNEL FET FOR OPTIMIZED LOW POWER APPLICATIONS: EXPLORING THE IMPACT OF DEVICE PARAMETER VARIATIONS /
- Transportation Tunnels /
- Acing the GATE 2017 : mechanical engineering /
- Gate tutor 2019 : electrical engineering /
Gaia: Thesis Paper of EECE in M.sc Prog.
Gaia: Electrical, Electronic and Communication Engineering.
- INTERPOLATION BASED ADAPTIVE REVERSIBLE DATA HIDING FOR DIGITAL IMAGE APPLICATIONS /
- ENERGY EFFICIENT OPERATIONS OF COMP BASED LTE-A CELLULAR NETWORKS WITH HYBERID POWER SUPPLIES /
- DESIGN AND CHARACTERIZATION OF BULK AND SOL FINFETS /
- BASE TRANSIT OF A GRADED BANE ALyGa1-yAs HBT USING THE ANALYTICAL MODEL DEVELOPED FOR SIGE DEVICE WITH FOR GAUSSIAN DOPED BASE /
- THE EARLY VOLTAGE AND CURRENT GAIN OF IN GA AS DOUBLE HETERO JUNCTION BIPOLAR TRANSISTOR /
- EFFECT OF POLARIZATION MODE DISPERSION (PMD) IN DIFFERENT CORE SHAPES AND BIT ERROR RATE (BER) PERFORMANCE IN FIBER OPTIC COMMUNICATION /